Our Silicon Carbide (SiC) Wafers

SiC Product Specifications
 
I. SiC Substrate
Size: 4″ / 6″ / 8″ / 12″
 
    4-inch (100mm)
        Crystal Type: 4H-SiC
        Type: Semi-Insulating (SI) / N-type Conductive
        Thickness: 350μm ±25μm
        Semi-insulating: ≥1×10¹⁰ Ω·cm
        N-type: 0.02～0.05 Ω·cm
        MPD: ＜0.5 cm⁻² (Commercial Grade), ＜0.1 cm⁻² (High Grade)
 
    6-inch (150mm)
        Crystal Type: 4H-SiC
        Thickness: 500μm ±25μm
        Type & Resistivity:
        Semi-insulating: ≥1×10¹⁰ Ω·cm
        N-type Conductive: 0.02～0.05 Ω·cm
        Micropipe Density: ＜0.05～0.1 cm⁻²
        TTV: ＜10μm (Standard), ＜5μm (High Precision)
        6″ N-type / 500μm / MPD＜0.1 cm⁻²
        6″ Semi-insulating / 500μm / MPD＜0.1 cm⁻²
 
    8-inch (200mm)
        Crystal Type: 4H-SiC
        Thickness: 650μm ±25μm
        Type:  N-type
        MPD: ＜0.1～0.5 cm⁻²
        TTV: ＜5μm
 
    12-inch (300mm)
        Thickness: 775μm
        Type: N-type
        MPD: ＜0.5 cm⁻²
 
II. SiC Epitaxial Wafer (4H-SiC)
Size:  6″ / 8″ / 12″
 
    6-inch Epitaxial Wafer
        (1) Medium & Low Voltage (650V / 1200V)
        650VEpitaxial Thickness: 4～6 μm
        Doping Concentration: (1.5～2.5)×10¹⁶ cm⁻³
        1200VEpitaxial Thickness: 10～12 μm
        Doping Concentration: (0.8～1.2)×10¹⁶ cm⁻³
        Thickness Uniformity: ≤±3%
        Doping Uniformity: ≤±5%
        Yield: ≥96%
        (2) High Voltage (1700V / 3300V)
        1700V Thickness: 14～18 μm
        Doping Concentration: (5～8)×10¹⁵ cm⁻³
        3300V Thickness: 28～35 μm
        Doping Concentration: (2～4)×10¹⁵ cm⁻³
 
    8-inch Epitaxial Wafer
        Thickness Range: 4～35 μm
        Uniformity: Thickness ≤3%, Doping ≤5%
        Yield: ≥96%
 
    12-inch Epitaxial Wafer
        Thickness: 10～12 μm (1200V)
        Uniformity: Thickness ≤3%, Doping ≤8%