Introduction

Our Silicon Carbide (SiC) wafers are advanced wide-bandgap semiconductor materials at the forefront of global technology, designed for high-voltage, high-frequency, high-temperature power electronics and RF applications. Leveraging our proprietary crystal growth and precision wafer-processing technologies, we deliver high-quality 100mm/150mm SiC substrates and epitaxial wafers with industry-leading performance and reliability. Our products are widely adopted in the global automotive, industrial, energy, and 5G/6G infrastructure supply chains.

Technical Background

SiC (Silicon Carbide) is a third-generation compound semiconductor with a unique covalent crystal structure. It exhibits a wide bandgap (3.3 eV), high breakdown electric field, superior thermal conductivity, and excellent chemical stability. These intrinsic properties enable SiC devices to operate efficiently at much higher voltages, temperatures, and switching frequencies than traditional silicon, fundamentally overcoming the performance limits of silicon-based power electronics.

SiC Product Specifications & Performance (2026)

-100mm (4-inch) SiC: Volume production, high quality, for automotive power, industrial inverters, and photovoltaic applications.
-150mm (6-inch) SiC: Advanced high-volume production, for next-gen EV traction, high-voltage power modules, and 5G RF devices.
Crystal Structure: 4H-SiC (predominant), 6H-SiC (customizable)
Type: N-type (conductive), Semi-insulating (high resistivity >10⁵ Ω·cm)
Orientation: <0001> 4° off-axis (standard), on-axis available
Thickness: 350μm – 1000μm (customizable)
Surface: Single/double side polished, epi-ready, Ra < 0.5nm
Micropipe Density: ≤ 0.1 / cm² (premium grade), ≤ 1 / cm² (standard）
Defects: Low BPD, low TSD, COP-free, high crystal perfection

Main Application Fields

-Automotive Power Electronics: EV traction inverters, OBC, DC-DC converters (high efficiency, high temperature, miniaturization)
-New Energy & Grid: Solar inverters, wind power, energy storage, UPS (higher energy efficiency, smaller size)
-Industrial & High-Voltage: Motor drives, power supplies, high-voltage ICs (high reliability, long lifetime)
-5G/6G & RF Infrastructure: Base station power amplifiers, radar, satcom (high frequency, low loss, high linearity)
-Aerospace & Extreme Environment: High-temperature, radiation-hardened electronics
-High-Performance Semiconductor Packaging: Power modules, high-power chiplets

Key Advantages vs. Silicon

-10× higher breakdown field → thinner layers, higher voltage rating
-3× wider bandgap → lower leakage, higher temperature operation (up to 200°C+)
-3× higher thermal conductivity → better heat dissipation, higher power density
-Lower switching loss → higher efficiency, smaller cooling systems
-Higher frequency capability → smaller passive components, higher power density