Introduction
Our Silicon-on-Insulator (SOI) wafers are core silicon-based materials leading the domestic technology, targeting high-end chips, radio frequency (RF) devices and sensors. Relying on the early SOI technology accumulation of the team led by our founder Chen Meng at the Chinese Academy of Sciences (CAS), we have formed independent intellectual property rights and possess the R&D and mass production capabilities of 200mm/300mm SOI wafers. Our products are widely recognized in the global advanced supply chain for their stable performance and advanced technology.
Technical Background
SOI (Silicon-on-Insulator): It features a three-layer structure of Top Silicon / Buried Oxide Layer (BOX) / Handle Silicon Substrate, which achieves electrical isolation, low power consumption, high temperature resistance and radiation resistance of devices. This unique three-layer “sandwich” structure fundamentally overcomes the performance limitations of traditional bulk silicon wafers.
SOI Product Specifications & Performance (2026)
-200mm (8-inch) SOI: Main product for mass production, applicable to RF devices, power devices, MEMS and automotive electronics.
-300mm (12-inch) SOI: Pilot line / small-batch production, targeting advanced logic chips, low-power SoC and HBM supporting applications. As the mainstream size of global silicon wafers, 12-inch SOI wafers represent the future development direction of the industry.
– Top Silicon Thickness: 50nm – 100μm (ultra-thin / standard / thick film types)
– Buried Oxide Layer (BOX): 100 – 400nm (standard / high-voltage / RF customized types)
– Uniformity: Top Silicon ±0.5%, BOX ±1%
– Surface Roughness: Ra < 0.5nm
– Crystal Orientation: <100>, <111>
– Doping: P/B, P/In, N/P, N/As, High-Resistivity SOI (>1kΩ·cm)
– Defects: COP-free, low dislocation density, ensuring the reliability and stability of downstream chips.
Main Application Fields
– RF Front-End: 5G/6G PA, LNA, filters, switches (low parasitism, high Q value, low loss). SOI wafers are often used in RF front-end chips due to their advantage of low substrate noise.
– Low-Power Logic / MCU: IoT, wearables, automotive MCU (lower leakage current, higher speed). SOI materials have the advantages of small parasitic capacitance and small short-channel effect, making them suitable for low-power circuit applications.
– Power Devices: LDMOS, IGBT, high-voltage IC (excellent isolation, high temperature resistance, anti-latch-up). At present, silicon-based IGBT is still the mainstream solution in the automotive field, and SOI wafers provide reliable support for its production.
– MEMS Sensors: Gyroscopes, accelerometers, pressure sensors (monolithic integration of structural layer and circuit). SOI materials are also used to manufacture MEMS optical switches through bulk micromachining technology.
– Automotive / Industrial / Aerospace: High temperature resistance, radiation resistance and high reliability. SOI wafers can work at temperatures up to 300°C, reducing overheating problems.
– Advanced Packaging / 3D Stacking: HBM, Chiplet supporting substrates, adapting to the development trend of high integration of semiconductors.
