SOI Product Specifications
1. 300mm (12-inch) | Process: SSS / Simbond / Bonding
Top silicon thickness: 20 nm ~ 1 μmStandard available thickness: 220 nm, 340 nm, 1 μm
Buried oxide (BOX) thickness: 0.4 μm ~ 3 μmStandard available thickness: 1 μm, 2 μm, 3 μm
Substrate thickness: 725 μmSubstrate option: Low-resistivity silicon, High-resistivity silicon (HR-SOI)
Mass production standard specifications:
Silicon Photonics: 220nm / 3μm / 725μm
RF & High-Voltage Automotive: 1μm / 2μm / 725μm
2. 200mm (8-inch) | Process: SIMOX / Bonding / Simbond
Top silicon thickness: 50 nm ~ 200 μmBuried oxide (BOX) thickness: 0.4 μm ~ 4 μmSubstrate thickness: 675 μm
Full resistivity range covered, including thin-film, standard and thick-film SOI solutions.
3. 150mm & below (6/4-inch) | Process: SIMOX, Bonding Minimum top silicon thickness: starting from 20 nmBuried oxide (BOX) thickness: starting from 0.4 μm Custom ultra-thin film, thick film and multi-layer SOI structures are available for mass production.